Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode-Reference-Cited by-同舟云学术

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Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode

Published:1999-10-04 Issue:14 Volume:75 Page:2138-2140
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Collins C. J.,Li T.,Beck A. L.,Dupuis R. D.,Campbell J. C.,Carrano J. C.,Schurman M. J.,Ferguson I. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.124942

Reference6 articles.

1. Low noisep-π-nGaN ultraviolet photodetectors

2. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

3. High-transparency Ni/Au ohmic contact to p-type GaN

4. Low-resistance ohmic contacts to p-type GaN

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1. A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance;IEEE Photonics Journal;2021-06

2. Filter-free AlGaN Photodiode with High Quantum Efficiency for Partial Discharge Detection;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2020-04-30

3. AlGaN avalanche Schottky diodes with high Al-content;Japanese Journal of Applied Physics;2019-05-14

4. Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range;Applied Physics Letters;2018-04-09

5. Structural, optical and electrical behavior of millisecond pulse laser damaged silicon-based positive-intrinsic-negative photodiode;Optik;2017-02

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