High-transparency Ni/Au ohmic contact to p-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123844
Reference16 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
3. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
4. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
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