High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106819
Reference7 articles.
1. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition
2. Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
3. Novel metalorganic chemical vapor deposition system for GaN growth
4. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition
5. High electron mobility GaN/AlxGa1−xN heterostructures grown by low‐pressure metalorganic chemical vapor deposition
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