High electron mobility GaN/AlxGa1−xN heterostructures grown by low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104886
Reference10 articles.
1. Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy
2. Electrical properties of n-type vapor-grown gallium nitride
3. Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition
4. Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
5. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition
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