Novel metalorganic chemical vapor deposition system for GaN growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105239
Reference5 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3
5. Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE
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