Avalanche breakdown and breakdown luminescence in p--n GaN diodes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19980535?crawler=true&mimetype=application/pdf
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1. Low noisep-π-nGaN ultraviolet photodetectors
2. Electric breakdown in GaN p‐n junctions
3. Shur, M.S.: ‘Physics of semiconductor devices’, (Printice Hall New Jersey 1990), p. 172
4. Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN
5. Ionization rates and critical fields in 4H silicon carbide
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