Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication
Author:
Affiliation:
1. School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
2. School of Electronics and Information Technology, Sun Yat-sen University, Gugangzhou, China
3. GaNology Semiconductor Co., Ltd, China
Funder
Shanghai Pujiang Program
Publisher
Informa UK Limited
Subject
General Engineering,General Chemical Engineering,General Computer Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/23311916.2020.1764171
Reference28 articles.
1. A fast quench-reset integrated circuit for high-speed single photon detection
2. Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage
3. An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes
4. Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
5. A Geiger-Mode APD Photon Counting System With Adjustable Dead-Time and Interchangeable Detector
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications;Frontiers in Materials;2022-03-11
2. Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness;Materials Research Express;2020-11-01
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