Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection-Reference-Cited by-同舟云学术

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Published:2024 Issue: Volume:12 Page:16022-16038
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Ghosh Somrita¹^ORCID,Acharyya Aritra²^ORCID,Biswas Arindam¹^ORCID,Banerjee Amit³^ORCID,Inokawa Hiroshi⁴,Satoh Hiroaki⁴,Seteikin Alexey Y.⁵,Samusev I. G.⁵^ORCID

Affiliation:

1. Department of Mining Engineering, Kazi Nazrul University, Burdwan, Asansol, West Bengal, India

2. Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Harinchawra, Ghughumari, Cooch Behar, West Bengal, India

3. Department of Physics, Microsystem Design-Integration Laboratory, Bidhan Chandra College, Asansol, West Bengal, India

4. Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan

5. Research and Education Center for Laser Nanotechnology and Information Biophysics, Immanuel Kant Baltic Federal University, Kaliningrad, Russia

Funder

Japan Society for the Promotion of Science

Research Centre for Biomedical Engineering, Japan in association with RIE, Shizuoka University, Japan

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6287639/10380310/10379636.pdf?arnumber=10379636

Reference70 articles.

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5. Velocity enhancement in APDs with sub-100-nm multiplication region