Nonlocal analysis to study of the impact ionization and avalanche characteristics of deep submicron Si devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Current impulse response of thin InP p+‐i‐n+ diodes using full band structure Monte Carlo method
2. Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
3. Impact ionization in submicron silicon devices
4. Impact Ionization in Thin Silicon Diodes
5. Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices
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