Dark current reduction in nano-avalanche photodiodes by incorporating multiple quantum barriers-Reference-Cited by-同舟云学术

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Dark current reduction in nano-avalanche photodiodes by incorporating multiple quantum barriers

Published:2017-05-25 Issue: Volume: Page:1-17
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Acharyya Aritra¹,Ghosh Somrita²

Affiliation:

1. Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Cooch Behar, India

2. Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, Mankundu, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/00207217.2017.1330426

Reference52 articles.

1. Effect of photo-irradiation on the noise properties of double-drift silicon MITATT device

2. Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

3. Effects of tunnelling current on millimetre-wave IMPATT devices

4. Inter-sub-band absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperature

5. Molecular beam epitaxy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection;IEEE Access;2024

2. Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes;Journal of Semiconductors;2020-03-01

3. Design novel structure of high-voltage MOSFET with double trench gates;Microelectronics Journal;2019-10

4. Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration;Journal of Semiconductors;2018-07

5. Diminution of impact ionization rate of charge carriers in semiconductors due to acoustic phonon scattering;Applied Physics A;2017-09-14

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