Effect of photo-irradiation on the noise properties of double-drift silicon MITATT device-Reference-Cited by-同舟云学术

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Effect of photo-irradiation on the noise properties of double-drift silicon MITATT device

Published:2013-08-15 Issue:9 Volume:101 Page:1270-1286
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Acharyya Aritra,Banerjee Suranjana,Banerjee J.P.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00207217.2013.830460

Reference38 articles.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Numerical study of magnetic field effect on graphene based IMPATT source;Superlattices and Microstructures;2020-01

3. Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part II: Avalanche Noise Characteristics;Emerging Trends in Terahertz Solid-State Physics and Devices;2020

4. Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation;physica status solidi (a);2019-07-17

5. Noise performance of avalanche transit-time devices in the presence of acoustic phonons;Journal of Computational Electronics;2018-12-06

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