Inter-sub-band absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperature-Reference-Cited by-同舟云学术

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Inter-sub-band absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperature

Published:1988-12-01 Issue:12 Volume:3 Page:1211-1216
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Allmen P von,Berz M,Petrocelli G,Reinhart F -K,Harbeke G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/3/i=12/a=010/pdf

Reference25 articles.

1. Spectroscopy of the electron subbands on (1 1 1)-Si

2. Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon

3. Intersubband spectroscopy and valley degeneracy of Si(110) and Si(111)n-type inversion layers

4. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well

5. Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides

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1. Comparison of electron scattering by acoustic-phonons in two types of quantum wells with GaAs and GaN materials;Nanoscale Advances;2024

2. Comparison of the magneto-optical properties of the HgS, GaSb, and GaAs materials of the Pöschl–Teller quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2023-08

3. Cyclotron resonance in the Pöschl–Teller quantum well under the influence of the asymmetric parameters;Physica B: Condensed Matter;2023-04

4. Cyclotron resonance linewidth due to electron scattering by five different phonon modes in semiparabolic quantum wells;Journal of Physics and Chemistry of Solids;2022-08

5. Intersubband absorption linewidth in a semi-parabolic quantum well: Comparison among three different phonon models;Physica B: Condensed Matter;2022-08

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