Comparison of electron scattering by acoustic-phonons in two types of quantum wells with GaAs and GaN materials-Reference-Cited by-同舟云学术

Comparison of electron scattering by acoustic-phonons in two types of quantum wells with GaAs and GaN materials

Published:2024 Issue:3 Volume:6 Page:832-845
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Phong Tran Cong¹²,Minh Le Ngoc³,Hien Nguyen Dinh⁴⁵^ORCID

Affiliation:

1. Atomic Molecular and Optical Physics Research Group, Institute for Advanced Study in Technology, Ton Duc Thang University, Ho Chi Minh City, Vietnam

2. Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam

3. Faculty of Physics, University of Sciences, Hue University, Hue City, Vietnam

4. Institute of Research and Development, Duy Tan University, Da Nang, Vietnam

5. School of Engineering & Technology, Duy Tan University, Da Nang, Vietnam

Abstract

In this work, we report a detailed comparison of electron–acoustic-phonon (EAP) interaction strength in symmetric (parabolic) and asymmetric (semi-parabolic) quantum-wells (QWs) for both GaAs and GaN materials.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NA/D3NA00274H

Reference74 articles.

1. Magnetophonon oscillations in quasi-two-dimensional quantum wells

2. 2D V‐V Binary Materials: Status and Challenges

3. Emerging 2D materials beyond graphene for ultrashort pulse generation in fiber lasers

4. Many‐Body Complexes in 2D Semiconductors

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