Spectroscopy of the electron subbands on (1 1 1)-Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. Temperature dependence of many-body effects in Si accumulation layers: An experimental observation
2. Intersubband spectroscopy of inversion layers in the principal surfaces of silicon: Many-body and “impurity” effects
3. Valley degeneracy and intersubband spectroscopy in silicon inversion layers
4. Optical absorption and collective modes of surface space-charge layers on (110) and (111) silicon
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Calculation of the intersubband absorption strength in ellipsoidal-valley quantum wells;Physical Review B;1990-04-15
2. Intersubband absorption in GaAs/AlGaAs quantum wells between 4.2K and room temperature;Superlattices and Microstructures;1989-01
3. Inter-sub-band absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperature;Semiconductor Science and Technology;1988-12-01
4. Intersubband cyclotron combined resonances in 2D systems with anisotropic and tilted valleys;Solid State Communications;1986-09
5. Grating-coupler-induced intersubband resonances in electron inversion layers of silicon;Physical Review B;1986-06-15
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