Valley degeneracy and intersubband spectroscopy in silicon inversion layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. Frequency domain studies of intersubband optical transitions in Si inversion layers
2. Shubnikov de Haas oscillations in n-type inversion layers on (110) and (111) surfaces of Si
3. Surface quantum oscillations in (110) and (111) n-type silicon inversion layers
4. Observation of Sixfold Valley Degeneracy in Electron Inversion Layers on Si(111)
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detector;Thin Solid Films;1990-01
2. Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension;The Physics of Submicron Semiconductor Devices;1988
3. The physics of quantum well structures;Reports on Progress in Physics;1985-12-01
4. Tunnel spectroscopy of electron sub-bands on Si surfaces;Journal of Physics C: Solid State Physics;1984-11-10
5. Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon;Physical Review B;1984-10-15
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