Intersubband absorption in GaAs/AlGaAs quantum wells between 4.2K and room temperature
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Spectroscopy of the electron subbands on (1 1 1)-Si
2. Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon
3. Intersubband spectroscopy and valley degeneracy of Si(110) and Si(111)n-type inversion layers
4. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
5. Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides
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1. Subband nonparabolicity estimated from multiple intersubband absorption in highly doped multiple quantum wells;Physical Review B;2004-01-28
2. Intersubband transitions in strainedIn0.07Ga0.93As/Al0.40Ga0.60As multiple quantum wells and their application to a two-colors photodetector;Physical Review B;1996-08-15
3. Doublet structure in the absorption coefficient for tunneling-split intersubband transitions in double quantum wells;Physical Review B;1996-06-15
4. Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1−xAs multiple quantum wells;Physical Review B;1995-11-15
5. Tunneling density of states and plasmon excitations in double-quantum-well systems;Physical Review B;1995-03-15
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