Monte Carlo simulations of sputter atom transport in low‐pressure sputtering: The effects of interaction potential, sputter distribution, and system geometry-Reference-Cited by-同舟云学术

Monte Carlo simulations of sputter atom transport in low‐pressure sputtering: The effects of interaction potential, sputter distribution, and system geometry

Published:1992-10 Issue:7 Volume:72 Page:3064-3071
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Myers A. M.,Doyle J. R.,Ruzic D. N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.351464

Reference21 articles.

1. Monte Carlo calculation of the thermalization of atoms sputtered from the cathode of a sputtering discharge

2. Monte Carlo simulation of the particle transport process in sputter deposition

3. Applications of Monte Carlo simulation in the analysis of a sputter‐deposition process

4. Monte Carlo simulation of the transport process in the growth ofa‐Si:H prepared by cathodic reactive sputtering

5. Monte Carlo simulations of magnetron sputtering particle transport

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