Monte Carlo simulation of the transport process in the growth ofa‐Si:H prepared by cathodic reactive sputtering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345228
Reference13 articles.
1. The influence of deposition parameters on the properties of amorphous silicon thin films produced by the magnetron sputtering method
2. Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputtering
3. Influence of sputtering conditions on H content and SiH bonding in aSi: H alloys
4. Thin film nucleation and growth kinetics
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1. Monte Carlo simulation of the influence of pressure and target–substrate distance on the sputtering process for metal and semiconductor layers;Modern Physics Letters B;2016-07-30
2. Magnetron plasma and nanotechnology;Physics-Uspekhi;2007
3. Multiscale Monte Carlo Simulation of Circular DC Magnetron Sputtering: Influence of Magnetron Design on Target Erosion and Film Deposition;Japanese Journal of Applied Physics;2006-11-08
4. Theoretical and experimental determination of the energy flux during magnetron sputter deposition onto an unbiased substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-03
5. Mechanisms for reactive DC magnetron sputtering of elements with different atomic masses: large area coatings of Al oxide and W oxide;Thin Solid Films;2000-08
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