Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1854726
Reference31 articles.
1. Control of relative etch rates of SiO2 and Si in plasma etching
2. Silicon etching mechanisms in a CF4/H2glow discharge
3. Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor
4. Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
5. Etch rate control in a 27 MHz reactive ion etching system for ultralarge scale integrated circuit processing
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