Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study

Author:

Tercero Jomar U.1ORCID,Isobe Michiro1ORCID,Karahashi Kazuhiro1ORCID,Vasquez Magdaleno R.2ORCID,Hamaguchi Satoshi1ORCID

Affiliation:

1. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University 1 , 2-1 Yamadaoka Suita, Osaka 565-0871, Japan

2. Department of Mining, Metallurgical, and Materials Engineering, College of Engineering, University of the Philippines 2 , Diliman, Quezon City 1101, Philippines

Abstract

Possible mechanisms of etch-stops in plasma-enhanced atomic layer etching (PE-ALE) for silicon nitride (SiN) were examined with molecular dynamics (MD) simulations. Recent experiments [Hirata et al., J. Vac. Sci. Technol. A 38, 062601 (2020)] have shown that the PE-ALE process of SiN consisting of hydro-fluorocarbon (HFC) adsorption and argon ion (Ar+) irradiation can lead to an etch-stop. The MD simulations have revealed that carbon (C) remnants at the end of a PE-ALE cycle can enhance further accumulation of C in the subsequent cycle. Under typical Ar+ ion irradiation conditions, nitrogen (N) atoms are preferentially removed from the surface over silicon (Si) atoms, and therefore, the SiN surface becomes more Si rich, which also promotes C accumulation by the formation of Si–C bonds. It is also seen that fluorine atoms contribute to the removal of Si, whereas hydrogen and C atoms contribute to the removal of N from the SiN surface.

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

American Vacuum Society

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