Atomistic Simulation of HF Etching Process of Amorphous Si<sub>3</sub>N<sub>4</sub> Using Machine Learning Potential-Reference-Cited by-同舟云学术

Atomistic Simulation of HF Etching Process of Amorphous Si₃N₄ Using Machine Learning Potential

Published:2024-08-28 Issue:36 Volume:16 Page:48457-48469
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hong Changho¹^ORCID,Oh Sangmin¹^ORCID,An Hyungmin¹^ORCID,Kim Purun-hanul¹^ORCID,Kim Yaeji²,Ko Jae-hyeon²,Sue Jiwoong²,Oh Dongyean²^ORCID,Park Sungkye²,Han Seungwu¹³^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea

2. SK Hynix Inc, Icheon-si, Gyeonggi-do 17336, Republic of Korea

3. Korea Institute for Advanced Study, Seoul 02455, Republic of Korea

Funder

Korea Institute for Advanced Study

National Supercomputing Center, Korea Institute of Science and Technology Information

Ministry of Trade, Industry and Energy

SK hynix

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c07949

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