Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating-Reference-Cited by-同舟云学术

Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating

Published:1990-09-17 Issue:12 Volume:57 Page:1179-1181
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Egawa T.,Tada H.,Kobayashi Y.,Soga T.,Jimbo T.,Umeno M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.103519

Reference6 articles.

1. GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

2. AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD

3. Room‐temperature continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

4. New mechanism for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition

5. Dislocation‐accelerated impurity‐induced layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures grown on GaAs‐on‐Si

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