Affiliation:
1. State Key Laboratory of Information Photonics and Optical Communications at Beijing University of Posts and Telecommunications, Beijing 100876, China
2. BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing 100876, China
Abstract
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substrate in a metal-organic chemical vapor deposition system and the other epilayers, including four sets of five-period strained-layer superlattices and the laser-structural layers, were successively grown in a molecular beam epitaxy system. The lasers were prepared as broad-stripe Fabry–Pérot ones with a stripe width of 21.5 μm and a cavity length of 1 mm. Typically, the threshold current and the corresponding threshold current density are 186.4 mA and 867 A/cm2, respectively. The lasing wavelength is around 980 nm, and the slope efficiency is 0.097 W/A with a single-facet output power of 22.5 mW at an injection current of 400 mA. This advancement makes the silicon-based monolithic optoelectronic integration relevant to quantum well lasers more promising with an enhanced feasibility.
Funder
National Key Research and Development Program of China
Beijing Municipal Science and Technology Commission
111 project of China
the Funds for Creative Research Groups of China
Fund of State Key Laboratory of IPOCand Beijing International Science and Technology Cooperation Base of Information Optoelectronics and Nanoheterostructures
Subject
Physics and Astronomy (miscellaneous)
Cited by
8 articles.
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