Novel Light Source Integration Approaches for Silicon Photonics-Reference-Cited by-同舟云学术

Novel Light Source Integration Approaches for Silicon Photonics

Published:2017-07 Issue:4 Volume:11 Page:1700063
ISSN:1863-8880
Container-title:Laser & Photonics Reviews
language:en
Short-container-title:Laser & Photonics Reviews

Author:

Wang Zhechao¹²,Abbasi Amin¹²,Dave Utsav¹²,De Groote Andreas¹²,Kumari Sulakshna¹²,Kunert Bernadette³,Merckling Clement³,Pantouvaki Marianna³,Shi Yuting¹²,Tian Bin¹²,Van Gasse Kasper¹²,Verbist Jochem¹,Wang Ruijun¹²,Xie Weiqiang¹²,Zhang Jing¹²,Zhu Yunpeng¹²,Bauwelinck Johan²⁴,Yin Xin²⁴,Hens Zeger²⁵,Van Campenhout Joris³,Kuyken Bart¹²,Baets Roel¹²,Morthier Geert¹²,Van Thourhout Dries¹²,Roelkens Gunther¹²

Affiliation:

1. Photonics Research Group; Department of Information Technology (INTEC); Ghent University - imec; Technologiepark-Zwijnaarde 15 B-9052 Gent Belgium

2. Center for Nano- and Biophotonics (NB-Photonics); Ghent University; Technologiepark-Zwijnaarde 15 B-9052 Gent Belgium

3. IMEC; Kapeldreef 75 3001 Heverlee Belgium

4. IDLab, Department of Information Technology; Ghent University - imec; Technologiepark-Zwijnaarde 15 B-9052 Gent Belgium

5. Department of Inorganic and Physical Chemistry; Ghent University; Krijgslaan 281 - building S3 (Campus Sterre) B-9000 Gent Belgium

Funder

European Research Council

European Space Agency

IAP P7/35 Photonics@BE

IMEC's industry-affiliation program on optical I/O

H2020 European Research Council

H2020 Leadership in Enabling and Industrial Technologies

H2020 LEIT Information and Communication Technologies

Publisher

Wiley

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/lpor.201700063/fullpdf

Reference145 articles.

1. Recent progress in lasers on silicon

2. On-Chip Optical Interconnect

3. Optical gain in silicon nanocrystals

4. Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

5. Lasing in direct-bandgap GeSn alloy grown on Si

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