New mechanism for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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New mechanism for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition

Published:1989-10-16 Issue:16 Volume:55 Page:1674-1676
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nozaki S.,Murray J. J.,Wu A. T.,George T.,Weber E. R.,Umeno M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.102232

Reference3 articles.

1. Heterointerface stability in GaAs‐on‐Si grown by metalorganic chemical vapor deposition

3. Activation characteristics and defect structure in Si‐implanted GaAs‐on‐Si

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