Dislocation‐accelerated impurity‐induced layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures grown on GaAs‐on‐Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102143
Reference13 articles.
1. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
2. Room‐temperature continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si
3. Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition
4. Stability of 300 K continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well lasers grown on Si
5. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
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