Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0 0 1) substrates
Author:
Funder
German Science Foundation
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
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4. Low-threshold continuous-wave room-temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coating;Egawa;Appl. Phys. Lett.,1990
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