AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 50 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth of III–V semiconductors and lasers on silicon substrates by MOCVD;Future Directions in Silicon Photonics;2019
2. Formation, faceting, and interaction behaviors of antiphase boundaries in GaAs thin films;Journal of Materials Science;2001
3. Heteroepitaxial growth of GaAs films on Si substrates using ion beams, neutral molecular beams, and their mixtures;Thin Solid Films;1999-07
4. Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls;Journal of Electronic Materials;1998-11
5. Heteroepitaxial growth of GaAs on Si substrates using low energy Ga and As ion beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-05
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