Electron density effects in the modulation spectroscopy of strained and lattice‐matched InGaAs/InAlAs/InP high‐electron‐mobility transistor structures-Reference-Cited by-同舟云学术

Electron density effects in the modulation spectroscopy of strained and lattice‐matched InGaAs/InAlAs/InP high‐electron‐mobility transistor structures

Published:1996-09-15 Issue:6 Volume:80 Page:3484-3487
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dimoulas A.,Davidow J.,Giapis K. P.,Georgakilas A.,Halkias G.,Kornelios N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.363219

Reference13 articles.

1. Two‐dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation‐doped quantum well structure

2. Room-temperature photoreflectance characterization of pseudomorphic GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the two-dimensional electron gas density

3. Degenerate electron gas effects in the modulation spectroscopy of pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures

4. Characterization of Pseudomorphic Hemt Structures by Modulation Spectroscopy

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1. Non-destructive, room temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy;physica status solidi (a);2005-05

2. Electronic parameters and electronic structures in modulation-doped highly strained InxGa1−xAs/InyAl1−yAs coupled double quantum wells;Solid State Communications;2004-02

3. Enhancement of electron transfer efficiency of the pseudomorphic InxGa1−xAs/InyAl1−yAs asymmetric step quantum well due to delta modulation doping;Materials Chemistry and Physics;2004-01

4. Strain effects, electronic parameters, and electronic structures in modulation-doped In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As coupled step-rectangular quantum wells;Journal of Applied Physics;2003

5. Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells;Journal of Applied Physics;2002-04-15