Characterization of Pseudomorphic Hemt Structures by Modulation Spectroscopy-Reference-Cited by-同舟云学术

Characterization of Pseudomorphic Hemt Structures by Modulation Spectroscopy

Published:1993 Issue: Volume:324 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Dimoulas A.,Zekentes K.,Androulidaki M.

Abstract

AbstractPhototransmittance has been used to investigate several pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures, with different values of the electron density ns. A lineshape analysis of the ground state transition made it possible to estimate ns, at room temperature. A signal from the Fermi-edge singularity (a manybody effect), was observed at low temperatures and the dependence of its intensity on temperature and electron density was examined.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference10 articles.

1. Interband transitions inInxGa1−xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy

2. Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well

3. Degenerate electron gas effects in the modulation spectroscopy of pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures

4. Two‐dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation‐doped quantum well structure

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1. Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures;Materials Science and Engineering: B;2001-03

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3. Electron density effects in the modulation spectroscopy of strained and lattice‐matched InGaAs/InAlAs/InP high‐electron‐mobility transistor structures;Journal of Applied Physics;1996-09-15

4. Detailed analysis of room-temperature photoreflectance of strained InxGa1−xAs/AlyGa1−yAs undoped single quantum wells;Journal of Applied Physics;1996