Degenerate electron gas effects in the modulation spectroscopy of pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures-Reference-Cited by-同舟云学术

Degenerate electron gas effects in the modulation spectroscopy of pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures

Published:1993-09-06 Issue:10 Volume:63 Page:1417-1419
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dimoulas A.,Zekentes K.,Androulidaki M.,Kornelios N.,Michelakis C.,Hatzopoulos Z.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.109695

Reference18 articles.

1. Excitonic enhancement of the Fermi-edge singularity in a dense two-dimensional electron gas

2. Fermi-energy-edge singularity in quantum wells containing more than one occupied subband

3. Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation‐doped field‐effect transistors

4. Modulation spectroscopy of semiconductor materials, interfaces, and microstructures: an overview

5. Modulation spectroscopy of semiconductor materials, interfaces, and microstructures: an overview

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