Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1454198
Reference22 articles.
1. The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes
2. Optical study of the electronic states ofIn0.53Ga0.47As/In0.52Al0.48As quantum wells in high electric fields
3. Second subband population in δ‐doped Al0.48In0.52As/Ga0.47In0.53As heterostructures
4. High performance polarization insensitive electroabsorption modulator based on strained GaInAs–AlInAs multiple quantum wells
5. Polarization-independent electroabsorption modulators using strain-compensated InGaAs-InAlAs MQW structures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells;Applied Surface Science;2005-02
2. Enhancement of the activation energy in modulation-doped AlxGa1−x As/InyGa1−yAs/GaAs quantum wells due to an embedded deep step layer;Materials Science and Engineering: B;2004-10
3. Optical parameters in ZnO nanocrystalline textured films grow on p-InP (100) substrates;Solid State Communications;2003-09
4. Strain effects, electronic parameters, and electronic structures in modulation-doped In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As coupled step-rectangular quantum wells;Journal of Applied Physics;2003
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