Second subband population in δ‐doped Al0.48In0.52As/Ga0.47In0.53As heterostructures-Reference-Cited by-同舟云学术

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Second subband population in δ‐doped Al0.48In0.52As/Ga0.47In0.53As heterostructures

Published:1995-02-06 Issue:6 Volume:66 Page:754-756
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lo Ikai,Mitchel W. C.,Ahoujja M.,Cheng J.‐P.,Fathimulla A.,Mier H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114083

Reference20 articles.

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the Al concentration on the electronic properties of coupled and uncoupled AlxGa1−xAs/AlAs/AlyGa1−yAs double quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2014-07

2. Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures;Journal of Applied Physics;2009-05

3. Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As∕GaAs quantum wells;Journal of Applied Physics;2006-09-15

4. Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure;Acta Physica Sinica;2006

5. Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells;Applied Surface Science;2005-02

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