Strain effects, electronic parameters, and electronic structures in modulation-doped In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As coupled step-rectangular quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference19 articles.
1. Magnetotunneling spectroscopy in wide In0.53Ga0.47As/In0.52Al0.48As double quantum wells
2. Enhancement of the interband Stark effects in strained CdxZn1−xTe/ZnTe coupled double quantum wells
3. Linewidth dependence of radiative exciton lifetimes in quantum wells
4. Selective Stark-ladder transitions in an asymmetric double-well GaAs/AlAs superlattice
5. Band‐gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice;Chinese Physics Letters;2009-07
2. Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1−xAs/In0.52Al0.48As multiple quantum wells;Applied Surface Science;2005-12
3. Polarization sensitivity characterization under normal incidence of a multiple quantum wells saturable absorber nonlinear mirror as a function of the temperature of the chip;Optics Communications;2005-10
4. The effect of potential fluctuations on the optical properties of InGaAs∕InAlAs superlattices;Journal of Applied Physics;2005-05-15
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