Optical study of the electronic states ofIn0.53Ga0.47As/In0.52Al0.48As quantum wells in high electric fields
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.2263/fulltext
Reference31 articles.
1. Electric field dependence of optical absorption near the band gap of quantum-well structures
2. Strong polarization‐sensitive electroabsorption in GaAs/AlGaAs quantum well waveguides
3. Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rules
4. Photocurrent spectroscopy in GaAs/AlGaAs multiple quantum wells under a high electric field perpendicular to the heterointerface
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1. Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures;Semiconductors;2013-07
2. Energy dependence of electron effective mass and effect of wave function confinement in a nanoscale In0.53Ga0.47As/In0.52Al0.48As quantum well;Journal of Applied Physics;2013-06-21
3. Evidence of nonparabolicity and size of wave function confined in In0.53Ga0.47As/In0.52Al0.48As multi quantum wells;Journal of Applied Physics;2008-05-15
4. Photo- and electro-reflectance spectroscopy of δ-doped GaAs/AlAs multiple quantum well structures;physica status solidi (a);2007-02
5. Enhancement of electron transfer efficiency of the pseudomorphic InxGa1−xAs/InyAl1−yAs asymmetric step quantum well due to delta modulation doping;Materials Chemistry and Physics;2004-01
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