Enhancement of electron transfer efficiency of the pseudomorphic InxGa1−xAs/InyAl1−yAs asymmetric step quantum well due to delta modulation doping
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference27 articles.
1. F. Capasso, Physics of Quantum Electron Devices, Springer-Verlag, Heidelberg, 1990.
2. The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes
3. Optical study of the electronic states ofIn0.53Ga0.47As/In0.52Al0.48As quantum wells in high electric fields
4. Second subband population in δ‐doped Al0.48In0.52As/Ga0.47In0.53As heterostructures
5. Modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step-graded InxGa1−xAs buffers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Strain on Electron Transport and Quantum Lifetimes in InxGa1−xAs/In0.52Al0.48As Modulation Doped Double Quantum Well‐Based High Electron Mobility Transistor Structures;physica status solidi (b);2024-03-03
2. Improvement of Electron Transport in Pseudomorphic In0.52Al0.48As/InyGa1-y As Double Quantum Well Structure;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07
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