Affiliation:
1. Department of Electronic Science Berhampur University Berhampur Odisha 760007 India
2. Centre of Excellence in Nano Science and Technology for the Development of Sensors Berhampur University Berhampur Odisha 760007 India
Abstract
The effect of tensile and compressive strain on low‐temperature electron transport (τt) and quantum (τq) lifetimes are analyzed as function of well width (w) in InxGa1−xAs/In0.52Al0.48As modulation‐doped double quantum well (MD‐DQW)‐based high electron mobility transistors structures. The DQW system can be made either lattice‐matched or strained, tensile and compressive, by considering x = 0.53, 0.41, and 0.75, respectively. Results show that the nonlinearity in τt and τq relates to the uneven dependence on the ionized impurity (ii), interface roughness (ir), and alloy disorder (al) scatterings. As w increases, τt enhances. The improvement in τt is substantial for the strained system compared to the unstrained. Further, for w < 94 Å, the ir‐scattering is more dominating under the compressive than the tensile strained structure, leading to τt (x = 0.41) > τt (x = 0.75). Conversely, τq is dominated by ii‐scattering exhibiting τq (x = 0.75) > τq (x = 0.53) > τq (x = 0.41). A hybrid structure is also proposed with one well tensile (x = 0.41) and the other as compressively (x = 0.75) strained, resulting in a step‐like MD‐DQW structure. As a result, only a single sub‐band is occupied leading to a twofold improvement in τt for w = 150 Å compared to the symmetric structures.
Funder
University Grants Commission - South Eastern Regional Office
Cited by
1 articles.
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