Author:
Jo Hyeon-Bhin,Yun Do-Young,Baek Ji-Min,Lee Jung-Hee,Kim Tae-Woo,Kim Dae-Hyun,Tsutsumi Takuya,Sugiyama Hiroki,Matsuzaki Hideaki
Abstract
Abstract
In this paper, we report an L
g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g
m_max) = 2.8 mS μm−1 at V
DS = 0.8 V and on-resistance (R
ON) = 279 Ω μm. At I
D = 0.56 mA μm−1 and V
DS = 0.5 V, the same device displayed an excellent combination of f
T = 703 GHz and f
max = 820 GHz. To the best of the authors’ knowledge, this is the first demonstration of a transistor with both f
T and f
max over 700 GHz on any material system.
Funder
BK21 Plus project through the Ministry of Education, Korea
Subject
General Physics and Astronomy,General Engineering
Cited by
29 articles.
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