Improvement of Electron Transport in Pseudomorphic In0.52Al0.48As/InyGa1-y As Double Quantum Well Structure
Author:
Affiliation:
1. Berhampur University,Department of Electronic Science,Berhampur,India
2. Berhampur University,Centre of Excellence in Nano Science and Technology for the Development of Sensors,Berhampur,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10134754/10134560/10134829.pdf?arnumber=10134829
Reference21 articles.
1. Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs
2. Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate
3. Electric field induced enhancement of multisubband electron mobility in strained GaAs/InGaAs coupled quantum well structures
4. Electronic properties of two-dimensional systems
5. Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
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