The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347140
Reference16 articles.
1. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
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3. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
4. p‐channel, strained quantum well, field‐effect transistor
5. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility
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1. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well;Semiconductors;2015-02
2. Atomic arrangements of a CuAu-I type ordered structure in strained InxGa1 − xAs/InyAl1 − yAs multiple quantum wells;Journal of Materials Science;2005-07
3. Enhancement of electron transfer efficiency of the pseudomorphic InxGa1−xAs/InyAl1−yAs asymmetric step quantum well due to delta modulation doping;Materials Chemistry and Physics;2004-01
4. Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells;Journal of Applied Physics;2002-04-15
5. Interfacial roughness and carrier scattering due to misfit dislocations in In[sub 0.52]Al[sub 0.48]As/In[sub 0.75]Ga[sub 0.25]As/InP structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
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