Electronic parameters and electronic structures in modulation-doped highly strained InxGa1−xAs/InyAl1−yAs coupled double quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference22 articles.
1. Linewidth dependence of radiative exciton lifetimes in quantum wells
2. Intersubband optical bistability induced by resonant tunneling in an asymmetric double quantum well
3. Enhancement of the interband Stark effects in strained CdxZn1−xTe/ZnTe coupled double quantum wells
4. Tunable coupled‐quantum‐well laser controlled by an electric field
5. Feasibility of room‐temperature operation of tunable coupled‐quantum‐well lasers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts;Semiconductors;2012-04
2. Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells;Chinese Physics B;2010-11
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