Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2221520
Reference13 articles.
1. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs
2. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
3. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
4. Electrical and optical properties of Fe-doped semi-insulating GaN templates
5. Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures
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