Interfacial engineering for semi-insulating GaN/sapphire template with low dislocation density-Reference-Cited by-同舟云学术

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Interfacial engineering for semi-insulating GaN/sapphire template with low dislocation density

Published:2022-04 Issue: Volume:901 Page:163609
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zhang Kang,Wu Hualong,Wang Qiao,Zhao Wei,Li Chengguo,Ren Yuan,Liu Ningyang,He Longfei,He Chenguang,Chen Zhitao

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference33 articles.

1. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs;Hubbard;J. Cryst. Growth,2005

2. Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer;Abhinay;Jpn. J. Appl. Phys.,2020

3. Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors;Ťapajna;Appl. Phys. Lett.,2011

4. Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer;Zhou;Appl. Surf. Sci.,2021

5. Evaluation of GaN as a Radiation Detection Material;Wang,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown On Ultrathin Step-bunched AlN Templates;Crystal Growth & Design;2023-12-06

2. Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices;ACS Applied Nano Materials;2023-03-09

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