Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3663573
Reference20 articles.
1. High Power GaN-HEMT for Wireless Base Station Applications
2. TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs
3. Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress
4. Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
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