PSO-Based Volterra Tensor Network for Predicting Short Circuit Degradation of p-GaN HEMT-Reference-Cited by-同舟云学术

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PSO-Based Volterra Tensor Network for Predicting Short Circuit Degradation of p-GaN HEMT

Published:2023-08-09 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 16th International Conference on Electronic Measurement & Instruments (ICEMI)
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Author:

Mei Wenjuan¹,Xiong Bingjie²,Zhang Jian³,Su Yuanzhang⁴,Liu Zhen¹,Zhou Qi³

Affiliation:

1. School of Automation Engineering, University of Electronic Science and Technology of China,Chengdu,China

2. ZTE corporation,Chengdu,China

3. School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China

4. School of Automation Engineering, School of Foreign Languages, University of Electronic Science and Technology of China,Chengdu,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10269800/10269827/10270119.pdf?arnumber=10270119

Reference30 articles.

1. Single pulse short-rircuit robustness and repetitive stress aging of GaN GITs.;alberto;2018 IEEE International Reliability Physics Symposium (IRPS),0

2. Electrical and thermal failure modes of 600 V p-gate GaN HEMTs.;thorsten;Microelectron Reliab,2017

3. Effect of TIM Deterioration on Monitoring of IGBT Module Thermal Resistance and Its Compensation Strategy

4. Investigation of the Influence of Temperature on Stress Waves at the Turn-off Moment in IGBT.;geng;IEEE Trans Instrum Meas,2022

5. Detecting anomalous sequences in electronic health records using higher-order tensor networks

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