Effect of TIM Deterioration on Monitoring of IGBT Module Thermal Resistance and Its Compensation Strategy
Author:
Affiliation:
1. School of Electrical Engeering, Chongqing University, Chongqing, China
2. Sichuan Energy Internet Research Institute, Tsinghua University, Chengdu, China
Funder
National Science Foundation of China for Distinguished Young Scholars
Key-Area Research and Development Program of Guangdong Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/5503870/9781672/09761221.pdf?arnumber=9761221
Reference40 articles.
1. Low Stress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling
2. Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module
3. Heat spreading revisited – effective heat spreading angle
4. Characterization Methods for Solid Thermal Interface Materials
5. Accurate measurement of interface thermal resistance by means of a transient method
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