Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation-Reference-Cited by-同舟云学术

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Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation

Published:2023-05-22 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)
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Author:

Mei Wenjuan¹,Pan Chaowu²,Liu Zhen¹,Su Yuanzhang³,Mei Yusong¹,Zhou Qi²

Affiliation:

1. School of Automation Engineering, University of Electronic Science and Technology of China,Chengdu,China

2. School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China,Chengdu,China

3. School of Automation Engineering, School of Foreign Language, University of Electronic Science and Technology of China,Chengdu,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10175865/10175876/10176003.pdf?arnumber=10176003

Reference10 articles.

1. Characterization of Deep and Shallow Traps in GaN HEMT Using Multi-Frequency C-V Measurement and Pulse-Mode Voltage Stress

2. A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

3. Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors;?apajna;Appl Phys Lett,2011

4. Mapping of interface traps in high-performance Al2 O 31A/GaN/GaN MIS-heterostructures using frequency-and temperature-dependent CV techniques;yang;2013 IEEE International Electron Devices Meeting IEEE,0

5. Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

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