High-resistivity GaN buffer templates and their optimization for GaN-based HFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Pressure Induced Deep Gap State of Oxygen in GaN
2. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
3. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
4. Properties of Fe-doped semi-insulating GaN structures
5. Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures
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1. Interfacial engineering for semi-insulating GaN/sapphire template with low dislocation density;Journal of Alloys and Compounds;2022-04
2. AlGaN/GaN Heterostructures Electrical Performance by Altering GaN/Sapphire Buffers Growth Pressure and Low‐Temperature GaN Interlayers Application;Crystal Research and Technology;2021-10-07
3. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors;Journal of Physics: Conference Series;2020-12-01
4. Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate;Philosophical Magazine;2019-04-08
5. Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier;Solid-State Electronics;2019-02
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