A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics-Reference-Cited by-同舟云学术

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A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Published:2022-01-26 Issue:5 Volume:54 Page:576-583
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surface & Interface Analysis

Author:

Narin Polat¹²^ORCID,Kutlu‐Narin Ece¹³,Atmaca Gokhan¹,Sarikavak‐Lisesivdin Beyza¹,Lisesivdin Sefer B.¹,Ozbay Ekmel⁴⁵⁶

Affiliation:

1. Department of Physics, Faculty of Science Gazi University Ankara Turkey

2. Central Research Laboratory Application and Research Center Ankara Yıldırım Beyazıt University Ankara Turkey

3. Department of Physics Engineering, Faculty of Engineering Ankara University Ankara Turkey

4. Nanotechnology Research Center Bilkent University Ankara Turkey

5. Department of Physics Bilkent University Ankara Turkey

6. Department of Electrical and Electronics Engineering Bilkent University Ankara Turkey

Funder

Türkiye Bilimler Akademisi

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sia.7067

Reference42 articles.

1. Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substrates

2. Reliability and parasitic issues in GaN-based power HEMTs: a review

3. Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications

4. Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

5. Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunneling and Thermionic Emission as Charge Transport Mechanisms in a W-Based Schottky Contacts on Algan/Gan Heterostructures;2024

2. Low-Resistive Ohmic Contacts in High-Electron-Mobility AlN/GaN Heterostructures by Suppressing the Oxygen Incorporation;ACS Applied Electronic Materials;2022-07-12

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