Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. MOVPE growth of GaN on a misoriented sapphire substrate
2. Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy
3. Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN
4. Suppression of Spiral Growth in Molecular Beam Epitaxy of GaN on Vicinal 6H-SiC(0001)
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2. Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC;Advanced Materials;2022-05-04
3. A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics;Surface and Interface Analysis;2022-01-26
4. Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs;ECS Journal of Solid State Science and Technology;2020-10-14
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